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| Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD1820 and 2SD1820A I Features * Large collector current IC * S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (0.425) 0.3+0.1 -0.0 3 0.15+0.10 -0.05 1.250.10 2.10.1 5 1 2 0.20.1 0 to 0.1 0.90.1 0.9+0.2 -0.1 (0.65) (0.65) 1.30.1 2.00.2 I Absolute Maximum Ratings Ta = 25C Parameter Collector to base voltage Collector to emitter voltage 2SB1219 2SB1219A 2SB1219 2SB1219A VEBO ICP IC PC Tj Tstg VCEO Symbol VCBO Rating -30 -60 -25 -50 -5 -1 -500 150 150 -55 to +150 V A mA mW C C V Unit V 10 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package Marking Symbol * 2SB1219 : C * 2SB1219A : D I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Symbol ICBO 2SB1219 2SB1219A 2SB1219 2SB1219A VEBO hFE1 hFE2 *2 Conditions VCB = -20 V, IE = 0 IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCE = -10 V, IC = -150 mA VCE = -10 V, IC = -500 mA IC = -300 mA, IB = -30 mA IC = -300 mA, IB = -30 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz Min -30 -60 -25 -50 -5 85 40 Typ Max - 0.1 Unit A V VCBO VCEO V V 340 - 0.35 -1.1 200 6 15 - 0.6 -1.5 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Marking symbol 2SB1219 2SB1219A VCE(sat) VBE(sat) fT Cob V V MHz pF Q 85 to 170 CQ DQ R 120 to 240 CR DR S 170 to 340 CS DS No-rank 85 to 340 C D Product of no-rank is not classified and have no indication for rank. 1 2SB1219, 2SB1219A PC Ta 240 -800 -700 IB = -10 mA Transistors IC VCE Ta = 25C -800 -700 IC IB VCE = -10 V Ta = 25C Collector power dissipation PC (mW) 200 160 Collector current IC (mA) -500 -400 -300 -200 -100 0 -4 -8 120 -3 mA -2 mA -1 mA 80 40 0 Collector current IC (mA) -600 -9 mA -8 mA -7 mA -6 mA -5 mA -4 mA -600 -500 -400 -300 -200 -100 0 -2 -4 -6 -8 -10 0 40 80 120 160 0 -12 -16 -20 0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) -100 -30 -10 -3 -1 Ta = 75C 25C -25C IC / IB = 10 -100 -30 -10 -3 25C -1 VBE(sat) IC IC / IB = 10 hFE IC 600 VCE = -10 V Forward current transfer ratio hFE 500 400 Ta = -25C 75C 300 Ta = 75C 200 25C -25C - 0.3 - 0.1 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 100 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT IE 240 Cob VCB 24 VCER RBE Collector to emitter voltage VCER (V) IE = 0 f = 1 MHz Ta = 25C -120 IC = -2 mA Ta = 25C Collector output capacitance Cob (pF) VCB = -10 V Ta = 25C Transition frequency fT (MHz) 200 20 -100 160 16 -80 120 12 -60 2SB1219A -40 2SB1219 -20 80 8 40 4 0 1 2 3 5 10 20 30 50 100 0 -1 -2 -3 -5 -10 -20-30 -50 -100 0 1 3 10 30 100 300 1 000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 |
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